Promising: The launch of 12th Gen Intel Core Alder Lake has officially made DDR5 mainstream, giving users the option to choose between the legacy DDR4 platform or the new DDR5-based platform. Unfortunately, ongoing material shortages and delivery delays have already made the new memory virtually non-existent for most consumers. Despite the availability and maturity issues of the current platform, Samsung has outlined its future plans for the next generation of superfast memory.
DDR5 is currently the new baby in the market. It’s bigger, faster (anyway) and unfortunately very difficult to find. Since the release of the new DDR standard, and now with 12th Gen Intel Alder Lake processors, enthusiasts have been eager to get their hands on any DDR5 memory kits to take advantage of the speed and capacity increases. During Samsung Tech Day this year, the company showed its hand and unveiled plans for the next generation of memory that is sure to grab the attention of speed lovers around the world.
DDR5 double DDR4 JEDEC standard speed, increasing from 3200 megatransfers per second (MT / s) to 6400 MT / s. Although not yet adopted as a JEDEC standard, Samsung is aiming to double the accepted standard speed again with DDR6, bumping it up to a whopping 12,800 MT / s with a theoretical overclocking speed of 17,000 MT / s. The standard is currently in an early stage of development and is slated for adoption sometime in 2024.
DDR6 isn’t the only new memory standard on the horizon. Samsung also mentioned further development of the graphics-oriented GDDR6 with the planned GDDR6 + standard reaching speeds of up to 24,000 MT / s.
Samsung is also on the heels of one of its main competitors, SK Hynix, which recently completed its first launch of High Speed Memory 3 (HBM3). Samsung plans to continue production of HBM3 as early as the second quarter of 2022. HBM offers high performance computing (HPC) users a faster, more power efficient, but more expensive alternative to traditional GDDR memory. The previous generation, HBM2, was used in AMD’s Vega, Radeon VII and Radeon Pro series GPUs, as well as several Nvidia GPUs, including the Titan V and Quadro GP100.
Like DDR5, DDR6 increases the number of channels and banks on each module. These architectural differences, as well as other factors such as memory timings, latency, power management, and Error Correction Code (ECC) capabilities, are factors contributing to Samsung’s ability to continue pushing the boundaries of memory speed and reliability.